MJB3055 INCHANGE NPN Transistor Datasheet, en stock, prix

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MJB3055

INCHANGE
MJB3055
MJB3055 MJB3055
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Part Number MJB3055
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS...
Features ETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB= 0 ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 4A ; VCE= 4V hFE-2 DC Current Gain IC= 10A ; VCE= 4V fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V; f= 500kHz MJB3055 MIN TYP. MAX UNIT 60 V 1.1 ...

Document Datasheet MJB3055 Data Sheet
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