MJB2955 - INCHANGE

MJB2955 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= -4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.

Features

nless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A -8.0 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V -1.8 V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= -30V; IB= 0 VCB= -70V; IE= 0 VCB= -70V; IE= 0;TC= 150℃ VEB= -5V; IC= 0 -0.7 mA -1.0 -10 mA -5.0 mA hFE-1 DC Current Gain IC= -4A ; V.