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·Lead formed for surface mount applications(NO suffix) ·Electrically the same as TIP31 series ·Pb-free package are available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .
s otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
* Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)
* VBE(on)
*
ICEO
Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current
IC=3A; IB= 375mA IC= 3A; VCE=4V VCE= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE1
* hFE2
*
DC Current Gain DC Current Gain
IC= 1A; VCE= 4 V IC= 3A; VCE= 4 V
fT
Current-Gain—Bandwidth Product
*:Pulse test PW≤300us,duty cycle≤2%
IC= 0.5A; VCE= 10V
MIN
TYP MAX UNIT
100
V
1.2
V
1.8
V
0.3
mA
1
mA
25
10
50
3
MHz
NOTICE： ISC reserves t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJB3055 |
INCHANGE |
NPN Transistor |
|
| 2 | MJB32B |
ST Microelectronics |
PNP SILICON POWER TRANSISTOR |
|
| 3 | MJB32C |
INCHANGE |
NPN Transistor |
|
| 4 | MJB13007 |
INCHANGE |
NPN Transistor |
|
| 5 | MJB2955 |
INCHANGE |
PNP Transistor |
|
| 6 | MJB41C |
ON Semiconductor |
Complementary Silicon Plastic Power Transistors |
|
| 7 | MJB41C |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | MJB42C |
ON Semiconductor |
Complementary Silicon Plastic Power Transistors |
|
| 9 | MJB42C |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 10 | MJB44H11 |
ON Semiconductor |
NPN Transistor |
|
| 11 | MJB44H11 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | MJB44H11T4-A |
STMicroelectronics |
Automotive-grade low voltage NPN power transistor |
|