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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage: VCE(sat) = 2.0(Max) @ IC= 5.0A ·Switching Time : tf= 0.9μs(Max.)@ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they a.
ure Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER 24 A 80 W 150 ℃ -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.56 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W MJB13007 iisc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJB13007 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 400 V VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 Collector-Emitter .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJB2955 |
INCHANGE |
PNP Transistor |
|
| 2 | MJB3055 |
INCHANGE |
NPN Transistor |
|
| 3 | MJB31C |
INCHANGE |
NPN Transistor |
|
| 4 | MJB32B |
ST Microelectronics |
PNP SILICON POWER TRANSISTOR |
|
| 5 | MJB32C |
INCHANGE |
NPN Transistor |
|
| 6 | MJB41C |
ON Semiconductor |
Complementary Silicon Plastic Power Transistors |
|
| 7 | MJB41C |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | MJB42C |
ON Semiconductor |
Complementary Silicon Plastic Power Transistors |
|
| 9 | MJB42C |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 10 | MJB44H11 |
ON Semiconductor |
NPN Transistor |
|
| 11 | MJB44H11 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | MJB44H11T4-A |
STMicroelectronics |
Automotive-grade low voltage NPN power transistor |
|