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ND261N |
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| Part Number | ND261N |
| Manufacturer | eupec |
| Description | N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module ND261N ND261N ElektKriesnchnedaEtigeennschaften / Electrical properties Elektrische Eigenschaften Höchstzulässige Werte / Maxim... |
| Features |
current
Isolations-Prüfspannung insulation test voltage
Tvj = Tvj max , iF = 800 A Tvj = Tvj max Tvj = Tvj max Tvj = Tvj max , vR = VRRM
RMS, f = 50 Hz, t = 1 sec RMS, f = 50 Hz, t = 1 min
vF V(TO) rT iR VISOL
max. 1,42 V
0,7 V
0,68 mΩ
max.
40 mA
3,6 kV 3,0 kV
Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case
pro Modul / per Module, Θ = 180° sin RthJC pro Modul / per Module, DC
max. 0,170 °C/W max. 0,164 °C/W
Übergangs-Wärmewiderstand thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur maximum junction... |
| Document |
 ND261N Data Sheet
PDF 236.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | ND260N |
eupec |
Rectifier Diode |
|
| 2 | ND260N12K |
INCHANGE |
Diode Rectifier |
|
| 3 | ND2012E |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 4 | ND2012L |
Siliconix |
N-Channel Depletion-Mode MOS Transistors |
|
| 5 | ND2012L |
TEMIC |
N-Channel Depletion-Mode MOSFET Transistors |
|