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SIDC105D120H8 |
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| Part Number | SIDC105D120H8 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subject (major changes since last revision) ... |
| Features |
1200V Emitter Controlled technology 120 µm chip Soft, fast switching Low reverse recovery charge Small temperature coefficient Qualified according to JEDEC for target applications Recommended for: Power modules and discrete devices Applications: SMPS, resonant applications, drives Chip Type VR IFn SIDC105D120H8 1200V 200A Die Size 8.7 x 12.1 mm2 Package sawn on foil Mechanical Parameters Die size Area total 8.7 x 12.1 105.27 mm2 Anode pad size 7.746 x 11.146 Thickness 120 µm Wafer size 200 mm Max. possible chips per wafer 242 Passivation frontside Photoimid... |
| Document |
 SIDC105D120H8 Data Sheet
PDF 217.88KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SIDC10D120H8 |
Infineon |
Fast switching diode |
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| 2 | SIDC112D170H |
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Fast switching diode |
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| 3 | SIDC11D60SIC3 |
Infineon Technologies AG |
Silicon Carbide Schottky Diode |
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| 4 | SIDC130D170H |
Infineon |
Fast switching diode |
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| 5 | SIDC14D120F6 |
Infineon |
Fast switching diode |
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