CTH1606NS-T52 |
Part Number | CTH1606NS-T52 |
Manufacturer | CT Micro |
Description | The CTH1606NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored ... |
Features |
Drain-Source Breakdown Voltage VDSS 60V Drain-Source On-Resistance RDS(ON) 52m, at VGS= 10V, ID= 15A RDS(ON) 70m, at VGS= 4.5V, ID= 10A Continuous Drain Current at TC=25℃ID =16A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Description The CTH1606NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Applications DC/DC... |
Document |
CTH1606NS-T52 Data Sheet
PDF 1.19MB |
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1 | CTH10003NS-T52 |
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2 | CTH11055NS |
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3 | CTH1706PS-T52 |
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P-Channel MOSFET | |
4 | CTH1804PS-T52 |
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5 | CTH214 |
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