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VSMG2020X01 |
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| Part Number | VSMG2020X01 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | VSMG2000X01 series are infrared, 850 nm emitting diodes in GaAlAs (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (S... |
| Features |
• Package type: surface-mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • Peak wavelength: λp = 850 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 12° • Low forward voltage • Suitable for high pulse current operation • Terminal configurations: gullwing or reserve gullwing • Package matches with detector VEMD2000X01 series • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • IrDA compatible d... |
| Document |
 VSMG2020X01 Data Sheet
PDF 154.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VSMG2000X01 |
Vishay |
Emitting Diodes |
|
| 2 | VSM002NE4MS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |
|
| 3 | VSM003N06HS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |
|
| 4 | VSM003N06HS-G |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |
|
| 5 | VSM007N07MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |
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