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STGW40H65DFB |
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| Part Number | STGW40H65DFB |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduct... |
| Features |
• Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between cond... |
| Document |
 STGW40H65DFB Data Sheet
PDF 498.84KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STGW40H65DFB-4 |
STMicroelectronics |
IGBT |
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| 2 | STGW40H65FB |
STMicroelectronics |
IGBT |
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| 3 | STGW40H120DF2 |
STMicroelectronics |
Trench gate field-stop IGBT |
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| 4 | STGW40M120DF3 |
STMicroelectronics |
Trench gate field-stop IGBT |
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| 5 | STGW40N120KD |
STMicroelectronics |
1200V short circuit rugged IGBT |
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