EPC2053 |
Part Number | EPC2053 |
Manufacturer | EPC |
Description | eGaN® FET DATASHEET EPC2053 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 3.8 mΩ ID , 48 A D G S EPC2053 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron m... |
Features |
ermal Resistance, Junction-to-Board
4.7
°C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1)
53
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC2053 eGaN® FETs are supplied in passivated die form with solder bumps. Die size: 3.5 mm x 2 mm
Applications • 48 V Servers • Lidar/Pulsed Power • Isolated Power Supplies • Point of Load Converters • Class D Audio • LED Lighting • Low Inductance Motor Dr... |
Document |
EPC2053 Data Sheet
PDF 961.12KB |
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