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STD100N10LF7AG |
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| Part Number | STD100N10LF7AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
| Features |
Order code STD100N10LF7AG
VDS 100 V
RDS(on) max. 9 mΩ
ID 80 A
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more ... |
| Document |
 STD100N10LF7AG Data Sheet
PDF 646.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STD100N10F7 |
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| 2 | STD100N10F7 |
INCHANGE |
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| 3 | STD100N03L |
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N-CHANNEL MOSFET |
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| 4 | STD100N03L-1 |
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| 5 | STD100N3LF3 |
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