FQPF8N50 |
Part Number | FQPF8N50 |
Manufacturer | OuCan |
Description | Product Summary The FQP8N50&FQPF8N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applica... |
Features |
Derate above 25oC
PD
192
38.5
1.5
0.3
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
-55 to 150 300
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RqJA RqCS
FQP8N50 65 0.5
FQPF8N50 65 --
Maximum Junction-to-Case
RqJC
0.65
* Drain current limited by maximum junction temperature.
3.25
Units V V
A
A mJ mJ V/ns W W/ oC °C
°C
Units °C/W °C/W °C/W
Page 1 of 6
FQP8N50/FQPF8N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parame... |
Document |
FQPF8N50 Data Sheet
PDF 296.49KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQPF8N60 |
Inchange Semiconductor |
N-Channel Mosfet Transistor | |
2 | FQPF8N60 |
AOKE |
600V N-Channel MOSFET | |
3 | FQPF8N60 |
OuCan |
8A N-Channel MOSFET | |
4 | FQPF8N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
5 | FQPF8N60CF |
Fairchild Semiconductor |
600V N-Channel MOSFET |