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PDS4856 |
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| Part Number | PDS4856 |
| Manufacturer | Potens semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
| Features |
40V,10A,RDS(ON) =15mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications Motor Drive Power Tools LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulse... |
| Document |
 PDS4856 Data Sheet
PDF 431.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PDS4806 |
Potens semiconductor |
Dual N-Channel MOSFETs |
|
| 2 | PDS4810 |
Potens semiconductor |
Dual N-Channel MOSFETs |
|
| 3 | PDS4150 |
Diodes |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
|
| 4 | PDS4200H |
Diodes |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
|
| 5 | PDS4200HQ |
DIODES |
4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
|