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NCE6007S |
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| Part Number | NCE6007S |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =7A RDS(ON)... |
| Features |
● VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V （Typ：24mΩ） RDS(ON) < 35mΩ @ VGS=4.5V （Typ：27mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 6007 NCE6007S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maxi... |
| Document |
 NCE6007S Data Sheet
PDF 412.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE6003 |
NCE Power |
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|
| 2 | NCE6003M |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE6003Y |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE6005AR |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE6005AS |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|