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BSP110 |
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| Part Number | BSP110 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application in relay, high-speed and line transformer driv... |
| Features |
• Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain MARKING CODE BSP110 PIN CONFIGURATION QUICK REFERENCE DATA Drain-source voltage Drain source voltage (non-repetitive peak; tp ≤ 2 ms) Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 200 mA; VGS = 10 V Transfer admittance ID = 200 mA; VDS = 15 V Yfs min. typ. RDS(on) VDS(SM) ± VGSO ID Ptot VDS BSP110 max. max. max. max. max. typ. max. 80 V 100 V 20 V 325 mA 1.5 W 4.5 Ω... |
| Document |
 BSP110 Data Sheet
PDF 75.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor |
|
| 2 | BSP100 |
NXP |
N-channel enhancement mode TrenchMOS transistor |
|
| 3 | BSP106 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 4 | BSP107 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 5 | BSP108 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|