TSF8N65M |
Part Number | TSF8N65M |
Manufacturer | Truesemi |
Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
Features |
• 7.5A, 650V, RDS(on) = 1.60 @VGS = 10 V • Low gate charge ( typical 29nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability D GDS TO-220 GD S TO-220F ● ◀▲ G ● ● S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pu... |
Document |
TSF8N65M Data Sheet
PDF 217.44KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF8N65C |
Thinki Semiconductor |
7.5A 650V Insulated N-Channel Type Power MOSFETs | |
2 | TSF8N60M |
Truesemi |
600V N-Channel MOSFET | |
3 | TSF8N70MR |
Truesemi |
N-Channel MOSFET | |
4 | TSF801D125A-S7 |
Token |
Saw Filters | |
5 | TSF801D125B-S6 |
Token |
Saw Filters |