This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 7.5A,700V,Max.RDS(on)=1.4 Ω @ VGS =10V
• Low gate charge(typical 21nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EAR IAR PD TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Repetitive Avalanc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF8N60M |
Truesemi |
600V N-Channel MOSFET | |
2 | TSF8N65C |
Thinki Semiconductor |
7.5A 650V Insulated N-Channel Type Power MOSFETs | |
3 | TSF8N65M |
Truesemi |
N-Channel MOSFET | |
4 | TSF801D125A-S7 |
Token |
Saw Filters | |
5 | TSF801D125B-S6 |
Token |
Saw Filters | |
6 | TSF80R1K3S1 |
Truesemi |
N-Channel MOSFET | |
7 | TSF80R240S1 |
Truesemi |
N-Channel MOSFET | |
8 | TSF80R380S1 |
Truesemi |
N-Channel MOSFET | |
9 | TSF80R500S1 |
Truesemi |
N-Channel MOSFET | |
10 | TSF80R600S1 |
Truesemi |
N-Channel MOSFET | |
11 | TSF80R850S1 |
Truesemi |
N-Channel MOSFET | |
12 | TSF830M |
Truesemi |
N-Channel MOSFET |