This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based .
■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V
■ Gate charge (Typical 30nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
General Description
This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Symbol
VDSS Drain to.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF8N65C |
Thinki Semiconductor |
7.5A 650V Insulated N-Channel Type Power MOSFETs | |
2 | TSF8N65M |
Truesemi |
N-Channel MOSFET | |
3 | TSF8N70MR |
Truesemi |
N-Channel MOSFET | |
4 | TSF801D125A-S7 |
Token |
Saw Filters | |
5 | TSF801D125B-S6 |
Token |
Saw Filters | |
6 | TSF80R1K3S1 |
Truesemi |
N-Channel MOSFET | |
7 | TSF80R240S1 |
Truesemi |
N-Channel MOSFET | |
8 | TSF80R380S1 |
Truesemi |
N-Channel MOSFET | |
9 | TSF80R500S1 |
Truesemi |
N-Channel MOSFET | |
10 | TSF80R600S1 |
Truesemi |
N-Channel MOSFET | |
11 | TSF80R850S1 |
Truesemi |
N-Channel MOSFET | |
12 | TSF830M |
Truesemi |
N-Channel MOSFET |