TSF8N65C - Thinki Semiconductor

TSF8N65C 7.5A 650V Insulated N-Channel Type Power MOSFETs

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F pkg is well suited for adaptor power unit and small power inverter application. A.

Features

■ High ruggedness
■ RDS(on) (Max 1.0 Ω )@VGS=10V
■ Gate Charge (Typical 48nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested 1. Gate{ { 2. Drain { ◀▲
● { 3. Source General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F pkg is well suited for adaptor power unit and small power inverter application. Absolute Maximum Ratings BVDSS = 650V RDS(ON) = .