Features
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0V, ID = 250mA
100
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V , TJ = 125 °C
On-State Drain Current1
ID(ON)
VDS = 10V, VGS = 10V
70
3
4
±100
1
10
Drain-Source On-State Resistance1
RDS(ON)
VGS = 10V, ID = 15A
39 50
Forward Transconductance1
gfs
VDS = 10V, ID = 15A
10
DYNAMIC
Input Capacitance Output Capacitance
Ciss Coss
VGS = 0V, VDS = 25V, f = 1MHz
1723 173
Reverse Transfer Capacitance
Crss
120
Gate Resistance
Rg
VGS = 0V, ...
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