CJD31C - Central Semiconductor

CJD31C NPN POWER TRANSISTORS

The CENTRAL SEMICONDUCTOR CJD31C and CJD32C are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a surface mount package, and designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-.

Features

NDITIONS MIN MAX ICEO VCE=60V 50 UNITS µA ICES VCE=100V 20 µA IEBO VEB=5.0V 1.0 mA BVCEO IC=30mA 100 V VCE(SAT) IC=3.0A, IB=375mA 1.2 V VBE(ON) VCE=4.0V, IC=3.0A 1.8 V hFE VCE=4.0V, IC=1.0A 25 hFE VCE=4.0V, IC=3.0A 10 50 fT VCE=10V, IC=500mA, f=1.0MHz 3.0 MHz hfe VCE=10V, IC=500mA, f=1.0kHz 20 R5 (22-August 2023) CJD31C NPN CJD32C PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DPAK CASE - MECHANICAL OUTLINE   
             LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PA.