CJD3439 - CDIL

CJD3439 NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Base Current Total Power Dissipation at Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD Tj, Tstg THERMAL CHARACTERISTICS Junction to Case Rth (j-c) VALUE 350 450 5.0 0.3 150 15 0.12 - 65 to +150 8.33.

Features

Saturation Voltage Base Emitter Saturation Voltage Base Emitter On Voltage ICBO IEBO hFE VCE (sat) VBE (sat) VBE (on) VCB=350V, IE=0 VBE=5V, IC=0 IC=2mA, VCE=10V IC=20mA, VCE=10V IC=50mA, IB=4mA IC=50mA, IB=4mA IC=50mA, VCE=10V DYNAMIC CHARACTERISTICS DESCRIPTION Current Gain Bandwidth Product Output Capacitance Small Signal Current Gain SYMBOL fT C0b hfe TEST CONDITION IC=10mA, VCE=10V, f=5MHz VCB=10V, IE=0, f=1MHz IC=5mA, VCE=10V, f=1KHz MIN TYP MAX 350 20 500 20 20 30 15 200 0.5 1.3 0.8 MIN TYP MAX 15 10 25 MARKING XY= Date Code CDIL CJD3439 XY MX UNIT V V V A mA W W/ºC ºC ºC/W UNI.