The CENTRAL SEMICONDUCTOR CJD340 and CJD350 are complementary silicon power transistors manufactured in a surface mount package, and designed for high voltage general purpose applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage V.
0V 100 µA BVCEO IC=1.0mA 300 V VCE(SAT) IC=100mA, IB=10mA (CJD340) 1.0 V VCE(SAT) IC=100mA, IB=10mA (CJD350) 2.6 V VBE(ON) VCE=10V, IC=1.0A (CJD340) 1.5 V VBE(ON) VCE=10V, IC=1.0A (CJD350) 2.0 V hFE VCE=10V, IC=50mA 30 240 fT VCE=10V, IC=50mA, f=10MHz 10 MHz R6 (22-August 2023) CJD340 NPN CJD350 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER w w w. c e n t r a l s e m i . c o m R6.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CJD3439 |
CDIL |
NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS | |
2 | CJD3055 |
Central Semiconductor Corp |
COMPLEMENTARY SILICON POWER TRANSISTOR | |
3 | CJD30N10 |
JCET |
N-Channel Power MOSFET | |
4 | CJD31C |
Central Semiconductor |
NPN POWER TRANSISTORS | |
5 | CJD32C |
Central Semiconductor |
PNP POWER TRANSISTORS | |
6 | CJD350 |
Central Semiconductor |
SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS | |
7 | CJD01N60 |
ZPSEMI |
N-Channel Power MOSFET | |
8 | CJD01N60 |
JCET |
N-Channel Power MOSFET | |
9 | CJD01N65B |
ZPSEMI |
N-Channel Power MOSFET | |
10 | CJD01N80 |
ZPSEMI |
N-Channel Power MOSFET | |
11 | CJD02N60 |
JCET |
N-Channel MOSFET | |
12 | CJD02N60 |
ZPSEMI |
N-Channel Power MOSFET |