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IPS12CN10LG |
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| Part Number | IPS12CN10LG |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | OptiMOS®2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating ... |
| Features |
• N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP12CN10L G IPS12CN10L G IPS12CN10L G IPP12CN10L G 100 V 12 mW 69 A Package PG-TO220-3 PG-TO251-3-11 Marking 12CN10L 12CN10L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I ... |
| Document |
 IPS12CN10LG Data Sheet
PDF 554.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPS12CN10L |
Infineon |
Power-Transistor |
|
| 2 | IPS12CN10L |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPS1225-40A |
IP Semiconductor |
Silicon Controlled Rectifiers |
|
| 4 | IPS1225-40B |
IP Semiconductor |
Silicon Controlled Rectifiers |
|
| 5 | IPS12N03LBG |
Infineon Technologies |
Power-Transistor |
|