PXFC193808SV Infineon Thermally-Enhanced High Power RF LDMOS FET Datasheet, en stock, prix

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PXFC193808SV

Infineon
PXFC193808SV
PXFC193808SV PXFC193808SV
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Part Number PXFC193808SV
Manufacturer Infineon (https://www.infineon.com/)
Description The PXFC193808SV is a 380-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, hi...
Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC193808SV Package H-37275G-6/2 Peak/Average (dB), Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 2850 mA, ƒ = 1880 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 20 Gain 16 12 40 Efficiency 20 0 8 -20 4 PAR @ 0.01% CCDF -40 0 -60c193808sv-gr1c 25 30 35 40 45 50 55 Average Output Power (dBm) Features
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Document Datasheet PXFC193808SV Data Sheet
PDF 190.68KB
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