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2SK1385 |
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| Part Number | 2SK1385 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power ... |
| Features |
10mA
800
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
2.5
3.5
5.0
V
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
1.0 1.5
Ω
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
500 uA
VSD
Diode Forward Voltage
IF=9A; VGS=0
1.5 1.58
V
tr
Rise time
230 350
ns
ton
Turn-on time
tf
Fall time
VGS=10V;ID=9A;RL=25Ω
280 425
ns
160 240
ns
toff
Turn-off time
460 690
ns
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The i... |
| Document |
 2SK1385 Data Sheet
PDF 204.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK1380 |
Toshiba |
MOSFET |
|
| 2 | 2SK1381 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | 2SK1382 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK1384 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK1386 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|