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MT3S113P |
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| Part Number | MT3S113P |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.15dB (typ... |
| Features |
• Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz) • High Gain:|S21e|2 = 10.5dB (typ.) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight : 0.05 g ( typ.) Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCES 13 V VCEO 5.3 V VEBO 0.6 V IC 100 mA IB 10 mA PC(Note1) 1.6 W Tj 150 °C Tstg −55 to 150 °C Note1:The device is mounted on a ceram... |
| Document |
 MT3S113P Data Sheet
PDF 223.15KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MT3S113 |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 2 | MT3S113TU |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 3 | MT3S111 |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 4 | MT3S111P |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 5 | MT3S111TU |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|