| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay |
Power Rectifiers Diodes • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Designed and qualified for industrial l |
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Vishay |
Heavy Duty High-Voltage Capacitor Low DF and Low Heating, Low DC & AC Voltage Coefficient. • Tighter Tolerance On Capacitance. • Highest AC Voltage Ratings. PERFORMANCE CHARACTERISTICS: Operating Temperature Range: -30°C to +85°C Storage Temperature Range: -40°C to +100°C Dielectric |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com |
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Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K • Not recommended for PCB bottom side wave mounting • Compliant to RoHS Dire |
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Vishay |
Dual Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K • Not recommended for PCB bottom side wave mounting • Compliant to RoHS Dire |
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Vishay |
Power Rectifier Diodes • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Compliant to RoHS directive 2002/95/EC |
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Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.vishay.com |
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Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.vishay.com |
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Vishay |
Power Rectifiers Diodes • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Designed and qualified for industrial l |
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Vishay |
Power Rectifiers Diodes • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Designed and qualified for industrial l |
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Vishay |
Power Rectifier Diodes • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Compliant to RoHS directive 2002/95/EC |
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Vishay |
Power Rectifier Diodes • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Compliant to RoHS directive 2002/95/EC |
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Vishay |
Power Rectifier Diodes • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Compliant to RoHS directive 2002/95/EC |
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Vishay |
Power Rectifier Diodes • Electrically isolated base plate • Types up to 1200 VRRM • 3500 VRMS isolating voltage • Simplified mechanical designs, rapid assembly • High surge capability • Large creepage distances • UL E78996 approved • Compliant to RoHS directive 2002/95/EC |
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Vishay |
Fast Recovery Diodes • Fast recovery time characteristics • Electrically isolated base plate • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly • Large creepage distances • UL E78996 approved • Compliant to RoHS directi |
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Vishay |
Dual Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 2 3 VFT4060C PI |
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Vishay |
Trench MOS Barrier Schottky Rectifier TO-263AB K • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • Compliant to RoHS Directive 2011/65/EU 1 TYPICAL APPLICATIONS P |
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Vishay |
Fast Recovery Diodes • Fast recovery time characteristics • Electrically isolated base plate • 3500 VRMS isolating voltage • Standard JEDEC package • Simplified mechanical designs, rapid assembly • Large creepage distances • UL E78996 approved • Compliant to RoHS directi |
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Vishay |
IGBT • Low VCE(on) trench IGBT technology • Low switching losses • 5 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD |
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Vishay |
Molding Type Module IGBT • Low VCE(on) trench IGBT technology • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper base |
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