| No. | Partie # | Fabricant | Description | Fiche Technique |
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Tuofeng Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V) TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source V |
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Tuofeng Semiconductor |
Single P-Channel Power MOSFET z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Powe |
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Tuofeng Semiconductor |
SCHOTTKY BARRIER DIODE zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection，High reliability zRoHS product TO-22OHF TO-22OF 1/6 Shenzhen Tuofeng Semiconductor Technology Co., Ltd ABSOLU |
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