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2015 |
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| Part Number | 2015 |
| Manufacturer | Tuofeng Semiconductor |
| Description | The 2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC ... |
| Features |
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
SOT-23
D 3
12 GS
Pin configuration (Top view)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Absolute Maximum ratings
2015
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b Pulsed Drain Current c ... |
| Document |
 2015 Data Sheet
PDF 208.79KB |
| Distributor | Stock | Price | Buy |
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