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2016 |
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| Part Number | 2016 |
| Manufacturer | Tuofeng Semiconductor |
| Description | The 2016 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM appli... |
| Features |
VDS (V) = 20V ID = 4.2 A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 63mΩ (VGS = 2.5V)
TO-236 (SOT-23) Top View
G D
S
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
TA=25°C
ID
Pulsed Drain Current B
IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum 20 ±12
4.2
15 1.4 0.9 -55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
t ≤ 10s Stead... |
| Document |
 2016 Data Sheet
PDF 190.59KB |
| Distributor | Stock | Price | Buy |
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