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Toshiba |
N-Channel MOSFET (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) |
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Toshiba Semiconductor |
P-Channel MOSFET ― 2-6J1B JEITA TOSHIBA Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 Note 1, Note 2, Note 3 and Note 4: See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant c |
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Toshiba |
Silicon N-Channel MOSFET (1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 11.9 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth |
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Toshiba |
MOSFETs (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 9.1 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = |
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Toshiba Semiconductor |
Field Effect Transistor ation W Weight: 0.08 g (typ.) 1.0 W Circuit Configuration 84 18 0.066 150 −55 to 150 mJ A mJ °C °C 8 7 6 5 1 2 3 4 Note 1, Note 2, Note 3 and Note 4: See the next page. Using continuously under heavy loads (e.g. the application of high te |
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Toshiba Semiconductor |
P-Channel MOSFET hannel temperature Storage temperature range JEITA TOSHIBA Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive devi |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 13.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Inte |
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Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note |
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Toshiba |
Silicon P-Channel MOSFET nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating |
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Toshiba |
MOSFETs (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA) |
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Toshiba Semiconductor |
MOSFETs (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) |
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Toshiba |
Silicon NPN epitaxial transistor / silicon epitaxial junction diode |
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Toshiba Semiconductor |
P-Channel MOSFET pation W 1.0 W Weight: 0.080 g (typ.) 219 -13 0.19 150 -55 to 150 mJ A mJ °C °C Circuit Configuration 8 7 6 5 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive de |
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Toshiba |
N-Channel MOSFET |
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Toshiba Semiconductor |
P-Channel MOSFET Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Circuit Configuration W mJ A mJ °C °C 8 7 6 5 1 2 3 4 Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page. Using continuously under |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating Unit 30 V 30 V ±20 V 40 A 120 45 W 2.8 W 1.6 W 208 mJ 40 A 4.5 mJ 150 °C −55 to 150 °C 0.95 ± 0.05 0.15 ± 0.05 0.166 ± 0.05 4 0.595 1 A 5.0 ± 0.2 S 0.05 S 1 4 |
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Toshiba Semiconductor |
Silicon P-Channel MOSFET (1) (2) (3) (4) Small footprint due to small and thin package Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 m |
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Toshiba |
MOSFETs (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 3.3 nC (typ.) Low drain-source on-resistance: RDS(ON) = 12 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = |
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Toshiba Semiconductor |
Field Effect Transistor = 10 s) (Note 2a) (t = 10 s) (Note 2b) JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3X1A Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25 ) (Note 4) Channel temperature Storage temperature range Weight: 0.02 g (typ.) mJ |
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Toshiba Semiconductor |
N-Channel MOSFET 30 −30 ±20 −10 −40 1.1 0.6 26 −10 0.11 150 −55 to 150 Unit V V V A W W mJ A mJ °C °C JEDEC ― JEITA ― TOSHIBA 2-3R1F Weight: 0.035 g (typ.) Circuit Configuration 8765 1234 Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page. |
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