TPCC8073 |
Part Number | TPCC8073 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | TPCC8073 MOSFETs Silicon N-Channel MOS (U-MOS) TPCC8073 1. Applications • • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features (1) (2) (3) (4) Small footprint due ... |
Features |
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Av... |
Document |
TPCC8073 Data Sheet
PDF 233.31KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TPCC8070 |
Toshiba |
Silicon N-Channel MOSFET | |
2 | TPCC8074 |
Toshiba |
Field Effect Transistor | |
3 | TPCC8076 |
Toshiba |
Silicon N-Channel MOSFET | |
4 | TPCC8001-H |
Toshiba Semiconductor |
Field Effect Transistor | |
5 | TPCC8002-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |