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Features
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(1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 4.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 11.9 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)
3. Packaging and Internal Circuit
TPC8065-H
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
...
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TPC8065-H Data Sheet
