| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba |
TK80E07NE |
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Toshiba Semiconductor |
TK8A65D icant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appr |
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Toshiba |
Silicon N Channel MOS Type Field Effect Transistor |
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Toshiba |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK8A25DA 1: Gate (G) 2: Drain ( |
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Toshiba |
TK80E08K3 change in Note :Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions |
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Toshiba Semiconductor |
Transistor significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design th |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET rature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute ma |
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Toshiba |
N-Channel MOSFET .) 2 change in Note : Using continuously under heavy loads (e.g. the application of high temperat ure/current/voltage and the signif icant temperature, etc.) may cause this product to decrease in the relia bility significantly even if the operating |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit 1: Gate |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.73 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 3.8 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packa |
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Toshiba |
N-Channel MOSFET f high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the |
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Toshiba |
Silicon N-channel MOS (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (H |
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Toshiba |
TK8A55DA TOSHIBA ⎯ SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliabili |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Fast reverse recovery time: trr = 80 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.44 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.4 |
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Toshiba Semiconductor |
Field Effect Transistor eliability significantly even if the operating conditions (i.e. Weight: 1.7 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconduc |
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Toshiba Semiconductor |
Field Effect Transistor |
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Toshiba |
Silicon N-channel MOSFET (1) High-speed switching (2) Small gate charge: QSW = 10 nC (typ.) (3) Small output charge: Qoss = 23 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6.1 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enha |
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Toshiba Semiconductor |
Switching Regulator Applications 1: Gate 2: Drain (Heat Sink) 3: Source 4.5±0.2 2.54 2.54 2.53±0.2 JEDEC JEITA TOSHIBA ⎯ ⎯ 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant |
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Toshiba |
Silicon N-channel MOS (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: S |
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Toshiba |
Silicon N-channel MOS (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (H |
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