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TK80E06K3A |
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| Part Number | TK80E06K3A |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TK80E06K3A MOSFETs Silicon N-channel MOS (U-MOS ) TK80E06K3A 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leaka... |
| Features |
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID... |
| Document |
 TK80E06K3A Data Sheet
PDF 262.70KB |
| Distributor | Stock | Price | Buy |
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