| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SK3667 .g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, |
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Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor ing continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. o |
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Toshiba Semiconductor |
2SK3669 ight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the |
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Toshiba Semiconductor |
2SK3662 e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage |
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Toshiba Semiconductor |
N-Channel MOSFET rse transfer capacitance Noise figure (Note 2) IGSS VGS = -30 V, VDS = 0 V (BR) GDS VDS = 0, IG = -100 mA IDSS VDS = 10 V, VGS = 0 (Note 1) VGS (OFF) VDS = 10 V, ID = 0.1 mA ïYfsï VDS = 10 V, VGS = 0, f = 1 kHz, (IDSS = 5 mA) Ciss VDS = 10 |
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Toshiba Semiconductor |
CMOS 8 BIT MICROCONTROLLER |
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Toshiba Semiconductor |
N-Channel MOSFET e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage |
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Toshiba Semiconductor |
N-Channel MOSFET Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditio |
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Toshiba Semiconductor |
2SK365 S (Note 1) VDS = 10 V, VGS = 0 1.2 VGS (OFF) ïYfsï Ciss VDS = 10 V, ID = 0.1 mA -0.25 VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 5.0 VDS = 10 V, VGS = 0, f = 1 MHz ¾ Crss RDS (ON) VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 mV, VGS = 0 (Note 2) |
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Toshiba Semiconductor |
2SK368 = 0.1 mA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, VGS = 0 RG = 100 kW, f = 100 Hz Note: IDSS classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA Marking Min Typ. Max Unit |
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Toshiba Semiconductor |
N-Channel MOSFET liability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Electrical |
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Toshiba Semiconductor |
N-Channel MOSFET S (Note 1) VDS = 10 V, VGS = 0 1.2 VGS (OFF) ïYfsï Ciss VDS = 10 V, ID = 0.1 mA -0.25 VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 5.0 VDS = 10 V, VGS = 0, f = 1 MHz ¾ Crss RDS (ON) VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 mV, VGS = 0 (Note 2) |
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Toshiba Semiconductor |
N-Channel MOSFET ¾ ¾ -1.0 nA -40 ¾ ¾ V IDSS (Note 1) VDS = 10 V, VGS = 0 2.6 ¾ 20 mA VGS (OFF) VDS = 10 V, ID = 0.1 mA -0.2 ¾ -1.5 V ïYfsï VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 12 28 ¾ mS Ciss VDS = 10 V, VGS = 0, f = 1 MHz ¾ 30 ¾ pF Crss VDG = 10 |
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Toshiba Semiconductor |
N-Channel MOSFET = 0.1 mA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, VGS = 0 RG = 100 kW, f = 100 Hz Note: IDSS classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA Marking Min Typ. Max Unit |
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Toshiba Semiconductor |
N-Channel MOSFET tance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit °C/W °C/W 2 Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C, L = 5.88 mH, IAR = 7.5 A, RG |
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Toshiba Semiconductor |
N-Channel MOSFET nge in Weight: 0.05 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please de |
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Toshiba Semiconductor |
N-Channel MOSFET g (typ.) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operati |
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Toshiba Semiconductor |
N-Channel MOSFET decrease in the Weight: 1.5 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET y cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing |
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Toshiba Semiconductor |
N-Channel MOSFET ductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) E |
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