2SK363 |
Part Number | 2SK363 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK363 Unit: mm • High breakdown volt... |
Features |
ductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance
IGSS
VGS = −30 V, VDS = 0
⎯
⎯ −1.0 nA
V (BR) GDS VDS... |
Document |
2SK363 Data Sheet
PDF 690.47KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK360 |
Hitachi Semiconductor |
N-Channel MOSFET | |
2 | 2SK3600-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
3 | 2SK3600-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
4 | 2SK3600-01SJ |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
5 | 2SK3600L |
Inchange Semiconductor |
N-Channel MOSFET Transistor |