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2SK3667 |
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| Part Number | 2SK3667 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward tran... |
| Features |
tance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit °C/W °C/W
2
Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C, L = 5.88 mH, IAR = 7.5 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
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2004-12-07
2SK3667
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown volt... |
| Document |
 2SK3667 Data Sheet
PDF 255.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK366 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK3662 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK3663 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR |
|
| 4 | 2SK3664 |
NEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR |
|
| 5 | 2SK3665 |
Panasonic |
N-Channel Enhancement Mode MOSFET |
|