| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SC5027 |
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Toshiba Semiconductor |
2SC5030 age DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance mbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = 50 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 |
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Toshiba Semiconductor |
2SC5052 |
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Toshiba Semiconductor |
NPN TRANSISTOR y Collector output capacitance Symbol ICBO IEBO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob Test Condition VCB = 240 V, IE = 0 VEB = 7 V, IC = 0 VCE = 10 V, IC = 4 mA VCE = 10 V, IC = 20 mA IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = |
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Toshiba Semiconductor |
2SC5029 s (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods |
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Toshiba Semiconductor |
2SC503 • High Transition Frequency : fx=80MHz (Typ.) • High Breakdown Voltage : VCEQ=80V (2SC503) : VCEO=60V (2SC504) . Complementary to 2SA503 and 2SA504. Unit in mm 09.39MAX. 08ASMA1( r 1 X < 5 d ^ I l ^0.45 a II 05.08 MAXIMUM RATINGS (Ta=25°C) |
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Toshiba Semiconductor |
2SC504 • High Transition Frequency : fx=80MHz (Typ.) • High Breakdown Voltage : VCEQ=80V (2SC503) : VCEO=60V (2SC504) . Complementary to 2SA503 and 2SA504. Unit in mm 09.39MAX. 08ASMA1( r 1 X < 5 d ^ I l ^0.45 a II 05.08 MAXIMUM RATINGS (Ta=25°C) |
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Toshiba Semiconductor |
2SC5086 ok (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2H1A Weight: 2.4 mg (ty |
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Toshiba Semiconductor |
NPN TRANSISTOR age DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance mbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = 50 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
NPN Transistor k (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g |
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Toshiba Semiconductor |
NPN Transistor ok (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2H1A Weight: 2.4 mg (ty |
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Toshiba Semiconductor |
NPN TRANSISTOR acteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 |
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Toshiba Semiconductor |
2SC5048 |
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Toshiba Semiconductor |
NPN TRANSISTOR ba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Electrical Characteristics (Tc = 25°C) Chara |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
NPN Transistor ook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 |
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Toshiba Semiconductor |
NPN Transistor book (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.00 |
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Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER |
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