C5030 Toshiba Semiconductor 2SC5030 Datasheet, en stock, prix

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C5030

Toshiba Semiconductor
C5030
C5030 C5030
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Part Number C5030
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description 2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • • • High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, I...
Features age DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance mbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = 50 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 4 A IC = 4 A, IB = 40 mA VCE = 2 V, IC = 4 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 20 800 250 ― ― ― 150 ― 45 Typ. ― 100 ― 100 ― ― 3200 ― ― 0. ― 1. ― 5 2 ― MH ― pF V V z ―V Max Unit nA nA 1 2004-07-26 http://www.Datasheet4U.com 2SC5030 Marking C5030 Part No. (or abbreviation...

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