Toshiba Semiconductor 2SA fiche technique

No.	Partie #	Fabricant	Description
1	A1013	Toshiba Semiconductor	2SA1013 ignificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Han
2	A1837	Toshiba Semiconductor	2SA1837 EB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −100 mA IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −500 mA VCE = −10 V, IC = −100 mA VCB = −10 V, IC = 0, f = 1 MHz Min Typ. Max Unit ― ― −1.0 µA ― ― −1.0 µA −230 ― ― V 100 ― 320 ― ― −1.
3	A1930	Toshiba Semiconductor	2SA1930 opriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-06-15 ht
4	A1941	Toshiba Semiconductor	2SA1941 c.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. relia
5	A1048	Toshiba Semiconductor	2SA1048 the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“De
6	2SA1015	Toshiba Semiconductor	Silicon NPN TRANSISTOR cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab
7	2SA1837	Toshiba Semiconductor	Silicon PNP Transistor EB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −100 mA IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −500 mA VCE = −10 V, IC = −100 mA VCB = −10 V, IC = 0, f = 1 MHz Min Typ. Max Unit ― ― −1.0 µA ― ― −1.0 µA −230 ― ― V 100 ― 320 ― ― −1.
8	A1263	Toshiba Semiconductor	2SA1263 . Complementary to 2SC3180 . Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collec
9	A949	Toshiba Semiconductor	2SA949
10	A1160	Toshiba Semiconductor	2SA1160 gnificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
11	A965	Toshiba Semiconductor	2SA965
12	A1680	Toshiba Semiconductor	2SA1680 ating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Conc
13	2SA1150	Toshiba Semiconductor	TRANSISTOR viewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C)
14	A1020	Toshiba Semiconductor	2SA1020 20 µs IB1 Switching time Storage time tstg Input IB2 Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −1.5 A IC = −1 A, IB = −0.05 A IC = −1 A, IB = −0.05 A VCE = −2 V, IC = −0.5 A VCB
15	2SA1020	Toshiba Semiconductor	PNP Transistor ng conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Con
16	2SA1771	Toshiba Semiconductor	TRANSISTOR
17	A1049	Toshiba Semiconductor	2SA1049 operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Deratin
18	A1972	Toshiba Semiconductor	2SA1972 he Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Datasheet pdf - http://www.DataSheet4U.
19	A1300	Toshiba Semiconductor	2SA1300 cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = -20 V, IE = 0 IEBO VEB = -6
20	2SA950	Toshiba Semiconductor	TRANSISTOR IC = -100 mA (Note) hFE (2) VCE (sat) VCE = -1 V, IC = -700 mA IC = -500 mA, IB = -20 mA VBE VCE = -1 V, IC = -10 mA fT VCE = -5 V, IC = -10 mA Cob VCB = -10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 100~200, Y: 160~320 Min Typ. Max