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2SA1150 |
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| Part Number | 2SA1150 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm • High hFE: hFE = 100~320 • Complementary to 2SC2710. Absolute Maximum Ra... |
| Features |
viewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = −30 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
hFE (1) (Note... |
| Document |
 2SA1150 Data Sheet
PDF 157.80KB |
| Distributor | Stock | Price | Buy |
|---|
