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A1930 |
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| Part Number | A1930 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • • High transition frequency: fT = 200 MHz (typ.) Complement... |
| Features |
opriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2007-06-15
http://www.Datasheet4U.com
2SA1930
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sa... |
| Document |
 A1930 Data Sheet
PDF 132.62KB |
| Distributor | Stock | Price | Buy |
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