Toshiba RN2 fiche technique

No.	Partie #	Fabricant	Description
1	RN2113MFV	Toshiba	Silicon PNP Epitaxial Type Transistors eight: 1.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if t
2	RN2610	Toshiba	Silicon PNP Epitaxial Type Transistor perature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
3	RN2409	Toshiba	Silicon PNP Epitaxial Type Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
4	RN2101MFV	Toshiba	Silicon PNP Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size
5	RN2422	Toshiba	Silicon PNP Epitaxial Type Transistor RN2421 to 2427 VCBO VCEO VEBO Ic Pc Tj Tstg −50 V −50 V −10 −5 V −6 −800 mA 200 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
6	RN2101	Toshiba	Silicon PNP Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
7	RN2416	Toshiba	Silicon PNP Epitaxial Type Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
8	RN2909	Toshiba	Silicon PNP Epitaxial Type Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba o
9	RN2104MFV	Toshiba	Silicon PNP Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size
10	RN2105	Toshiba	Silicon PNP Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
11	RN2305	Toshiba	Silicon PNP Epitaxial Type Transistors (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
12	RN2110MFV	Toshiba	Silicon PNP Epitaxial Type Transistors eight: 1.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if t
13	RN2507	Toshiba	Silicon PNP Epitaxial Type Transistor 0 C −55 to150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if th
14	RN2505	Toshiba	Silicon PNP Epitaxial Type Transistor dissipation Junction temperature Storage temperature range RN2501 to 2506 RN2501 to 2504 RN2505, 2506 RN2501 to 2506 VCBO VCEO VEBO IC PC* Tj Tstg −50 V −50 V −10 V −5 −100 mA 300 mW 150 °C −55 to150 °C Note: Using continuously under
15	RN2415	Toshiba	Silicon PNP Epitaxial Type Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
16	RN2417	Toshiba	Silicon PNP Epitaxial Type Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
17	RN2401	Toshiba	Silicon PNP Epitaxial Type Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
18	RN2601	Toshiba	Silicon PNP Epitaxial Type Transistor e Collector current Collector power dissipation Junction temperature Storage temperature range RN2601 to RN2606 RN2601 to RN2604 RN2605, RN2606 RN2601 to RN2606 VCBO VCEO VEBO IC PC* Tj Tstg −50 V −50 V −10 V −5 −100 mA 300 mW 150 C −5
19	RN2408	Toshiba	Silicon PNP Epitaxial Type Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide
20	RN2425	Toshiba	Silicon PNP Epitaxial Type Transistor RN2421 to 2427 VCBO VCEO VEBO Ic Pc Tj Tstg −50 V −50 V −10 −5 V −6 −800 mA 200 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change