RN2110MFV |
Part Number | RN2110MFV |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | RN2110MFV, RN2111MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2110MFV, RN2111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circ... |
Features |
eight: 1.5 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimate... |
Document |
RN2110MFV Data Sheet
PDF 353.24KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RN2110 |
Toshiba |
Silicon PNP Epitaxial Type Transistors | |
2 | RN2111 |
Toshiba |
Silicon PNP Epitaxial Type Transistors | |
3 | RN2111MFV |
Toshiba |
Silicon PNP Epitaxial Type Transistors | |
4 | RN2112 |
Toshiba |
Silicon PNP Epitaxial Type Transistors | |
5 | RN2112MFV |
Toshiba |
Silicon PNP Epitaxial Type Transistors |