| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Toshiba Semiconductor |
TK4A60DB n 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product |
|
|
|
|
Toshiba |
TK4A60DA temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolu |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET C-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significan |
|
|
|
|
Toshiba |
N-Channel MOSFET (1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit TK4A80E 1 : Gate 2 : Drain |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET ature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute max |
|
|
|
|
Toshiba |
N-Channel MOSFET temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolu |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET 7 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantl |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET -10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly ev |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please desi |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET C-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significan |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET OSHIBA ⎯ SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability |
|