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TK4A80E |
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| Part Number | TK4A80E |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK4A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leakage current : IDSS = 1... |
| Features |
(1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.4 mA)
3. Packaging and Internal Circuit
TK4A80E
1 : Gate 2 : Drain 3 : Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channe... |
| Document |
 TK4A80E Data Sheet
PDF 380.96KB |
| Distributor | Stock | Price | Buy |
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