No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba |
2SD2131 ture, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upo |
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Toshiba Semiconductor |
Silicon NPN Transistor nt Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
Silicon NPN Transistor ure/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliabili |
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Toshiba Semiconductor |
Silicon NPN Transistor ture, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upo |
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Toshiba Semiconductor |
NPN Transistor |
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