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2SD2129 |
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| Part Number | 2SD2129 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2129 2SD2129 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE... |
| Features |
ure/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω Emitter
1
http://store.iiic.cc/
2006-11-21
Electrical Characteristics (Tc = 25°C)
2SD2129
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain
Collector-e... |
| Document |
 2SD2129 Data Sheet
PDF 134.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2120 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 2 | 2SD2121 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor |
|
| 3 | 2SD2121L |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor |
|
| 4 | 2SD2121S |
Hitachi Semiconductor |
Silicon NPN Epitaxial Planar Transistor |
|
| 5 | 2SD2122 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|